Download MA4AGSW8-1 Datasheet PDF
MACOM Technology Solutions
MA4AGSW8-1
MA4AGSW8-1 is SP8T AlGaAs PIN Diode Switch manufactured by MACOM Technology Solutions.
- Part of the MA4AGSW8-1-MA comparator family.
FEATURES  Ultra Broad Bandwidth: 50 MHz to 40 GHz  Functional Bandwidth : 50 MHz to 50 GHz  Low Current consumption. - -10m A for low loss state - +10m A for Isolation state  M/A-’s unique Al Ga As hetero-junction anode technology.  Silicon Nitride Passivation  Polymer Scratch protection Rev. V2 Yellow areas indicate bond pads DESCRIPTION M/A-’s MA4AGSW8-1 is an Aluminum-Gallium Arsenide, single pole, eight throw (SP8T), PIN diode switch. The switch features enhanced Al Ga As anodes which are formed using M/A-’s patented heterojunction technology. Al Ga As technology produces a switch with less loss than a device fabricated using conventional Ga As processes. As much as a 0.3 d B reduction in insertion loss can be realized at 50 GHz. This device is fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes within the chip exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage during handling and assembly to the diode junction and the chip anode air-bridges. Off chip bias circuitry is required. APPLICATIONS The high electron mobility of Al Ga As and the low capacitance of the PIN diodes used makes this switch ideal for fast response, high frequency, multi-throw switch designs. Al Ga As PIN diode switches are an ideal choice for switching arrays in radar systems, radiometers, test equipment and other multi-assembly ponents. Absolute Maximum Ratings @ TAMB = +25°C Parameter Operating Temperature Storage Temperature Incident C.W. RF Power Breakdown Voltage Maximum Rating -55°C to +125°C -55°C to +150°C +23d Bm C.W. 25V Bias Current ± 25m A Assembly Temperature Junction Temperature +300°C < 10 sec +175°C Maximum bined operating conditions for RF Power, D.C. bias, and temperature: +23 d Bm C.W. @ 10 m A (per diode) @ +85°C. M/A-...