MA4P274CK-1146T Datasheet | MACOM Technology Solutions

Silicon PIN / NIP Diode Chips Features - Switch & Attenuator Die - Extensive Selection of I-Region Lengths - Hermetic - Glass Passivated Cermachip - Oxide Passivated Planar Chips - Voltage Ratings to 3000 V - Fast Switching Speed - Low Loss - High Isolation - Ro HS- pliant Description MA offers a prehensive line of low capacitance, planar and mesa, silicon PIN/NIP diode chips which use ceramic glass and silicon nitride passivation technology. The silicon PIN/NIP chip series of devices cover a broad spectrum of performance requirements for control circuit applications. They are available in several choices of I-region lengths and have been optimally designed to minimize parametric trade offs when considering low capacitance, low series resistance, and high breakdown voltages. Their small size and low parasitics, make them an ideal choice for broadband, high frequency, micro-strip hybrid assemblies. The attenuator line of PIN diode chips are a planar or mesa construction and because of their thicker I-regions and predictable RS vs. I characteristics, they are well suited for low distortion attenuator and switch circuits. Incorporated in the chip’s construction is MA’s, time proven, hard glass, Cermachip process. The hard glass passivation pletely encapsulates the entire PIN junction area resulting in a hermetically sealed chip which has been qualified in many military applications. These Cermachip diodes are available in a wide range of voltages, up to 3,000 volts, which are capable of controlling kilowatts of RF power. Many of MA ’s silicon PIN diode chips are also available in several different package styles. Please refer to the “Packaged PIN Diode Datasheet” for case style availability and electrical specifications located on the MA website. Also for high voltage, high power devices refer to MA4PK2000. PIN / NIP Diode Chips Rev. V28 PIN Chip Anode NIP...