MA4P506-30 Datasheet | MACOM Technology Solutions

Packaged PIN Diodes Features - High Power - Fast Speed - Voltage Ratings to 1500 Volts - Wide Selection of Carrier Lifetimes - Wide Selection of Capacitances - Assortment of Packages Styles - Available Screened for Military Applications - Ro HS- pliant Description and Applications MA’s broad line of packaged PIN diodes enpass a prehensive range of electrical characteristics and package outlines. This diverse union of semiconductor technology and chip packaging gives considerable flexibility to the circuit designer. The fast switching series of packaged PIN diodes utilize a thin I-region, silicon oxide or glass passivated chip which provides for low leakage current and low insertion loss. With the use of in process control monitors to regulate wafer fabrication parameters, these devices will achieve consistent performance in control circuit applications. The high voltage product line of packaged PIN diodes employs MA CERMACHIP® passivation process which provides for a hard glass encapsulation that hermetically seals and protects the active area of the chip. These packaged CERMACHIP® PIN diodes are ideally suited for use in high power applications where high level RF voltages are present. The diode chips are bonded into sealed ceramic packages that are designed for the most stringent electrical and environmental conditions. An extensive choice of package styles are available which may be used in a wide variety of RF microwave circuits. The packaged PIN diodes series are designed to have a high inherent reliability and may be ordered screened to meet many MIL-STD requirements. Packaged PIN Diodes Rev. V15 Co-Axial Packages 30, 296 120,255 Leaded/Surface Mount Packages Thru Hole 1072,1079 Threaded Packages Maximum Power Dissipation Package Style Cathode Heatsink Leaded @ +25°C Absolute Maximum PDISS T (max. oper.) -25°C Thermal Resistance 250 m W Surface Mount @ +25°C 300 m...