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MA4PBL027 - HMIC Silicon Beam Lead PIN Diode

Download the MA4PBL027 datasheet PDF. This datasheet also covers the MA4PBL027-MA variant, as both devices belong to the same hmic silicon beam lead pin diode family and are provided as variant models within a single manufacturer datasheet.

General Description

The MA4PBL027 is a silicon beam lead PIN diode fabricated with MACOM’s HMIC™ process.

Key Features

  • No Wirebonds Required.
  • Rugged Silicon-Glass Construction.
  • Silicon Nitride Passivation.
  • Polymer Scratch and Impact Protection.
  • Low Parasitic Capacitance and Inductance.
  • Ultra Low Capacitance < 40 fF.
  • Excellent RC Product < 0.10 ps.
  • High Switching Cutoff Frequency > 110 GHz.
  • 110 Nanosecond Minority Carrier Lifetime.
  • Driven by Standard +5 V TTL PIN Diode Driver.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MA4PBL027-MA-COM.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MA4PBL027 HMIC Silicon Beam Lead PIN Diode Features • No Wirebonds Required • Rugged Silicon-Glass Construction • Silicon Nitride Passivation • Polymer Scratch and Impact Protection • Low Parasitic Capacitance and Inductance • Ultra Low Capacitance < 40 fF • Excellent RC Product < 0.10 ps • High Switching Cutoff Frequency > 110 GHz • 110 Nanosecond Minority Carrier Lifetime • Driven by Standard +5 V TTL PIN Diode Driver Description The MA4PBL027 is a silicon beam lead PIN diode fabricated with MACOM’s HMIC™ process. It features one silicon pedestal embedded in a low loss, low dispersion glass which supports the beam-leads. The diode is formed on the top of the pedestal, and air-bridges connect the diode to the beam-leads.