MAAM26100-P1 Datasheet | MACOM Technology Solutions

Ga As MMIC Power Amplifier 2 - 6 GHz Rev. V7 Features - Saturated Output Power: 30.5 d Bm Typical - Gain: 20 d B Typical - Power Added Efficiency: 30% Typical - On-Chip Bias Network - DC Decoupled RF Input and Output - Lead-Free High Performance Ceramic Package - Ro HS- pliant and 260°C Reflow patible Description The MAAM26100-P1 is a Ga As MMIC two stage high efficiency power amplifier in a lead-free high performance bolt down ceramic package. The MAAM26100-P1 is a fully monolithic design which eliminates the need for external circuitry in 50-ohm systems. The MAAM26100-P1 is ideally suited for driver amplifiers and transmitter outputs in UMTS applications, test equipment, electronic warfare jammers, missile subsystems and phased array radars. The MAAM26100-P1 is fabricated using a mature 0.5-micron gate length Ga As process. The process Features full passivation for increased performance reliability. Ordering Information Part Number MAAM26100-P1 Package Ceramic Bolt Down Functional Diagram GND GND RFIN GGNNDD GND RFOUT Pin Configuration Pin No. 1 2 3 4 5 Function GND GND RFIN GND GND Pin No. 6 7 8 9 10 Function VGG GND RFOUT GND...