Datasheet4U Logo Datasheet4U.com

MABT-011000 - Integrated Bias Network

Download the MABT-011000 datasheet PDF. This datasheet also covers the MABT-011000-MA variant, as both devices belong to the same integrated bias network family and are provided as variant models within a single manufacturer datasheet.

Description

The MABT-011000 is a fully monolithic broadband surface mount bias network utilizing MACOM’s patented HMIC process.

This process allows the formation of silicon vias by imbedding them in low loss, low dispersion glass along with high Q spiral inductors and MIM capacitors.

Features

  • Specified over Broad Bandwidth: 2 - 18 GHz.
  • Surface Mount.
  • Extremely Low Insertion Loss: < 0.3 dB.
  • High RF-DC Isolation: > 34 dB.
  • Rugged, Fully Monolithic Glass Encapsulation.
  • RoHS.
  • Compliant and 260°C Reflow Compatible.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MABT-011000-MA-COM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MAB01D MAB01D Tesla
MAB08E MAB08E Tesla
MAB08F MAB08F Tesla
MAB08G MAB08G Tesla
MAB16E MAB16E Tesla

Other Datasheets by MACOM Technology Solutions

Part Number Description
MABA-007159-000000 RF 1:1 Transmission Line Transformer
MABA-007237-ETC410 E-Series RF 1:4 Coupled Step-Up Transformer
MABA-007569-ETK42T E-Series RF 1:4 Transmission Line Step-up Transformer
MABA-007681-CT2010 Transformer
MABA-009210-CT1760 1:1 Transmission Line Balun

Full PDF Text Transcription

Click to expand full text
MABT-011000 Integrated Bias Network 2 - 18 GHz Features  Specified over Broad Bandwidth: 2 - 18 GHz  Surface Mount  Extremely Low Insertion Loss: < 0.3 dB  High RF-DC Isolation: > 34 dB  Rugged, Fully Monolithic Glass Encapsulation  RoHS* Compliant and 260°C Reflow Compatible Description The MABT-011000 is a fully monolithic broadband surface mount bias network utilizing MACOM’s patented HMIC process. This process allows the formation of silicon vias by imbedding them in low loss, low dispersion glass along with high Q spiral inductors and MIM capacitors. The close proximity of elements and the combination of silicon and glass give this HMIC device low loss and high performance with exceptional repeatability through millimeter frequencies.
Published: |