Datasheet Summary
Bumped GaAs SP3T Switch for WLAN 1.0
- 4.0 GHz
Rev. V2
Features
- 802.11b/g and Bluetooth Applications
- Low Insertion Loss:
0.5 dB 2.4 GHz to 2.5 GHz band
- High Isolation: 32 dB Typical on RX
- Low Harmonics: <-70 dBc @ 20 dBm
- Flip-chip configuration
- RoHS- pliant
Description
The MASW-009276-000DIE is a bumped GaAs pHEMT MMIC SP3T switch. Typical applications are WLAN (802.11 b/g) and Bluetooth applications.
Die Bump Pad Layout (bump side up)
The MASW-009276-000DIE delivers high isolation, low insertion loss, and high linearity at 2.4
- 2.5 GHz. This device is fabricated using a 0.5 micron gate length GaAs pHEMT process. The process Features full passivation...