MGPN1506-C12 Overview
The MGPN GaAs PIN Diodes are a series of GaAs PIN diodes suitable for high frequency, >26 GHz, switch and high speed modulation applications. V1 , TC = +25°C Parameters Units Test Condition MGPN0515-C12 VBR V IR = 10 µA Min. 50 68 VF CJ RS TL mV pF Ohms ns IF = 10 mA VR= 10 V, F = 1 MHz IF = 20 mA, F = 1 GHz IF = 10 mA IR = 6 mA Typ.
MGPN1506-C12 Key Features
- Nanosecond Switching Speed with Low-Cost TTL Logic
- Low Series Resistance
- No Reverse Bias Required for Low Loss
- RoHS- pliant