MHV507-19-1 Datasheet PDF - MA-COM Silicon Hyperabrupt Varactor Diode Specs

MHV507-19-1 - Silicon Hyperabrupt Varactor Diode

This page provides the datasheet information for the MHV507-19-1, a member of the MHV507-19-1-MA Silicon Hyperabrupt Varactor Diode family.

Datasheet Summary

Description

The MHV507-19-1 silicon hyperabrupt tuning varactor offers a large change in junction capacitance over a small tuning voltage range.

It is a mesa device with an epitaxial-deposited cathode layer for low series resistance and high quality factor.

Features

High Capacitance Ratio: 3 Minimum.
High Quality Factor: 1500 Typical.
Compact Surface Mount Package.
Ultra-thin Termination Plating to Combat Embrittlement.
RoHS.
Compliant.

Datasheet Details

Part number	MHV507-19-1
Manufacturer	MA-COM
File Size	527.30 KB
Description	Silicon Hyperabrupt Varactor Diode
Datasheet	MHV507-19-1 Datasheet
Additional preview pages of the MHV507-19-1 datasheet.

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Full PDF Text Transcription

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MHV507-19-1 Silicon Hyperabrupt Varactor Diode Features  High Capacitance Ratio: 3 Minimum  High Quality Factor: 1500 Typical  Compact Surface Mount Package  Ultra-thin Termination Plating to Combat Embrittlement  RoHS* Compliant Description The MHV507-19-1 silicon hyperabrupt tuning varactor offers a large change in junction capacitance over a small tuning voltage range. It is a mesa device with an epitaxial-deposited cathode layer for low series resistance and high quality factor. The die is passivated with a high-reliability glass passivation for very fast settling time. This varactor diode is packaged in an epoxyencapsulated surface mount package.

Published: Aug 13, 2018 |