MHV507-19-1 Datasheet | MACOM Technology Solutions

Features - High Capacitance Ratio: 3 Minimum - High Quality Factor: 1500 Typical - pact Surface Mount Package - Ultra-thin Termination Plating to bat Embrittlement - Ro HS- pliant Description The MHV507-19-1 silicon hyperabrupt tuning varactor offers a large change in junction capacitance over a small tuning voltage range. It is a mesa device with an epitaxial-deposited cathode layer for low series resistance and high quality factor. The die is passivated with a high-reliability glass passivation for very fast settling time. This varactor diode is packaged in an epoxyencapsulated surface mount package. The MHV507-19-1 is ideally suited for voltage controlled filters, analog voltage controlled phase shifters and voltage controlled oscillators. Electrical Specifications: TA = +25°C Parameter Test Conditions Breakdown Voltage (VB) Reverse Leakage Current (IR) Total Capacitance (CT) Capacitance Ratio IR = 10 µA VR...