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MHV507-19-1 - Silicon Hyperabrupt Varactor Diode

Download the MHV507-19-1 datasheet PDF. This datasheet also covers the MHV507-19-1-MA variant, as both devices belong to the same silicon hyperabrupt varactor diode family and are provided as variant models within a single manufacturer datasheet.

General Description

The MHV507-19-1 silicon hyperabrupt tuning varactor offers a large change in junction capacitance over a small tuning voltage range.

It is a mesa device with an epitaxial-deposited cathode layer for low series resistance and high quality factor.

Key Features

  • High Capacitance Ratio: 3 Minimum.
  • High Quality Factor: 1500 Typical.
  • Compact Surface Mount Package.
  • Ultra-thin Termination Plating to Combat Embrittlement.
  • RoHS.
  • Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MHV507-19-1-MA-COM.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MHV507-19-1 Silicon Hyperabrupt Varactor Diode Features  High Capacitance Ratio: 3 Minimum  High Quality Factor: 1500 Typical  Compact Surface Mount Package  Ultra-thin Termination Plating to Combat Embrittlement  RoHS* Compliant Description The MHV507-19-1 silicon hyperabrupt tuning varactor offers a large change in junction capacitance over a small tuning voltage range. It is a mesa device with an epitaxial-deposited cathode layer for low series resistance and high quality factor. The die is passivated with a high-reliability glass passivation for very fast settling time. This varactor diode is packaged in an epoxyencapsulated surface mount package.