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MMDB35-B11 - Silicon Step Recovery Diodes

Download the MMDB35-B11 datasheet PDF (MMD805-C12-MA included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for silicon step recovery diodes.

Description

The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability.

The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picoseconds pulse forming.

Rev.

Features

  • Output Combs to 40+ GHz.
  • Transition Times down to 35 ps.
  • Screening per MIL-PRF-19500 and MIL-PRF- 38534 available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MMD805-C12-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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Silicon Step Recovery Diodes Features • Output Combs to 40+ GHz • Transition Times down to 35 ps • Screening per MIL-PRF-19500 and MIL-PRF- 38534 available Description The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picoseconds pulse forming. MMDx & SMMDx Series Rev. V5 Plastic SMT w/leads Chip & Beam Lead Electrical Specifications: TA = 25°C Model Voltage Breakdown (VB) V Min. Junction Capacitance (CJ) pF Min. Max. Lifetime (t) ns Min. Typ. Transition Time (tt) ps Typ. Max. Frequency Cutoff (FCO) GHz Typ. Theta (θJC) °C/W Max. Chip MMD805-C12 60 2.5 3.5 80 100 250 300 130 15 MMD810-C12 50 1.5 2.
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