MNP0010 Datasheet | MACOM Technology Solutions

Features - Rugged Construction - Fully Passivated - Low Leakage - Available in Both Chip and Package Styles - Screening per MIL-PRF-19500 and MIL-PRF- 38534 Available Description The MNP0010 is a silicon NIP diode that features a fully passivated mesa construction for low leakage and reliability. Rev. V2 Electrical Specifications: TC = +25°C Parameter Test Conditions Voltage Breakdown Junction Capacitance DIE Package (C12p) Total Capacitance Package Style: ET47p T54p T55p T89p Series Resistance IR = 10 µA VR = 10 V, 1 MHz VR = 10 V, 1 MHz IF = 10 m A, 500 MHz Lifetime IF = 10 m A, IR = 6 m A, 50% I Layer - Units V p F Min. 150 - Typ. - 0.08 Max. - 0.12 p F - 0.48 0.60 0.28 0.37 0.21 0.29 0.33 0.43 Ω - 2.0 2.5 ns - 300 - µm - 20 - Absolute Maximum Ratings1,2 Parameter Reverse Voltage Thermal Resistance Operating & Storage Temperature Absolute Maximum 150...