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MRF141G - RF Power FET

Download the MRF141G datasheet PDF. This datasheet also covers the MRF141G-MA variant, as both devices belong to the same rf power fet family and are provided as variant models within a single manufacturer datasheet.

General Description

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Note: The manufacturer provides a single datasheet file (MRF141G-MA-COM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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MRF141 RF FIELD-EFFECT POWER TRANSISTOR Advanced Semiconductor

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MRF141G RF Power FET 300W, 175MHz, 28V Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency band solid state transmitters and amplifiers.  Guaranteed performance at 175MHz, 28V: Output power: 300W Gain: 12dB (14dB Typ.) Efficiency: 50%  Low thermal resistance: 0.35°C/W  Ruggedness tested at rated output power  Nitride passivated die for enhanced reliability Product Image Rev. V1 M/A-COM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM") products.