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MSS30-148-E25 - Low Barrier Silicon Schottky Diodes

This page provides the datasheet information for the MSS30-148-E25, a member of the MSS30-046-C15-MA Low Barrier Silicon Schottky Diodes family.

Description

The MSS30-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry.

Optimum mixer performance is obtained with LO power of -3 dBm to +3 dBm per diode.

Rev.

Features

  • VF, RD and CJ Matching Options.
  • Chip, Beam Lead and Packaged Devices.
  • Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available.

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Full PDF Text Transcription

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MSS30-xxx-x Series Low Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS30-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of -3 dBm to +3 dBm per diode. Rev. V1 Chip Electrical Specifications: TA = 25°C Model Configuration MSS30-046-C15 Single Junction VF Typ. V 0.29 MSS30-050-C15 Single Junction 0.27 Test Conditions IF = 1 mA VBR Min. V 2 CJ Typ. / Max. pF 0.10 / 0.12 2 0.15 / 0.18 IR = 10 µA VR = 0 V F = 1 MHz RS Typ. Ω 10 6 RD Max. Ω 18 15 I = 5 mA FCO Typ.
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