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MSS30-248-E35 - Low Barrier Silicon Schottky Diodes

Download the MSS30-248-E35 datasheet PDF. This datasheet also covers the MSS30-046-C15-MA variant, as both devices belong to the same low barrier silicon schottky diodes family and are provided as variant models within a single manufacturer datasheet.

Description

The MSS30-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry.

Optimum mixer performance is obtained with LO power of -3 dBm to +3 dBm per diode.

Rev.

Features

  • VF, RD and CJ Matching Options.
  • Chip, Beam Lead and Packaged Devices.
  • Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MSS30-046-C15-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by MACOM Technology Solutions

Part Number Description
MSS30-248-B20 Low Barrier Silicon Schottky Diodes
MSS30-248-H30 Low Barrier Silicon Schottky Diodes
MSS30-242-B20 Low Barrier Silicon Schottky Diodes
MSS30-242-E35 Low Barrier Silicon Schottky Diodes
MSS30-242-H30 Low Barrier Silicon Schottky Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MSS30-xxx-x Series Low Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS30-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of -3 dBm to +3 dBm per diode. Rev. V1 Chip Electrical Specifications: TA = 25°C Model Configuration MSS30-046-C15 Single Junction VF Typ. V 0.29 MSS30-050-C15 Single Junction 0.27 Test Conditions IF = 1 mA VBR Min. V 2 CJ Typ. / Max. pF 0.10 / 0.12 2 0.15 / 0.18 IR = 10 µA VR = 0 V F = 1 MHz RS Typ. Ω 10 6 RD Max. Ω 18 15 I = 5 mA FCO Typ.
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