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MSS30-442-B41 - Low Barrier Silicon Schottky Diodes

Download the MSS30-442-B41 datasheet PDF. This datasheet also covers the MSS30-046-C15-MA variant, as both devices belong to the same low barrier silicon schottky diodes family and are provided as variant models within a single manufacturer datasheet.

Description

The MSS30-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry.

Optimum mixer performance is obtained with LO power of -3 dBm to +3 dBm per diode.

Rev.

Features

  • VF, RD and CJ Matching Options.
  • Chip, Beam Lead and Packaged Devices.
  • Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MSS30-046-C15-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by MACOM Technology Solutions

Part Number Description
MSS30-442-E45 Low Barrier Silicon Schottky Diodes
MSS30-448-B41 Low Barrier Silicon Schottky Diodes
MSS30-448-E45 Low Barrier Silicon Schottky Diodes
MSS30-454-B40 Low Barrier Silicon Schottky Diodes
MSS30-454-E45 Low Barrier Silicon Schottky Diodes

Full PDF Text Transcription

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MSS30-xxx-x Series Low Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS30-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of -3 dBm to +3 dBm per diode. Rev. V1 Chip Electrical Specifications: TA = 25°C Model Configuration MSS30-046-C15 Single Junction VF Typ. V 0.29 MSS30-050-C15 Single Junction 0.27 Test Conditions IF = 1 mA VBR Min. V 2 CJ Typ. / Max. pF 0.10 / 0.12 2 0.15 / 0.18 IR = 10 µA VR = 0 V F = 1 MHz RS Typ. Ω 10 6 RD Max. Ω 18 15 I = 5 mA FCO Typ.
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