Datasheet Summary
MSS50-xxx-x Series
High Barrier Silicon Schottky Diodes
Features
- VF, RD and CJ Matching Options
- Chip, Beam Lead and Packaged Devices
- Hi-Rel Screening per MIL-PRF-19500 and MIL-
PRF-38534 Available
Description
The MSS50-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +2 dBm to +8 dBm per diode.
Rev. V1
Chip
Electrical Specifications: TA = 25°C
Model
Configuration
VF Typ.
MSS50-048-C15 Single Junction
VBR Min.
CJ Typ. / Max. pF
0.12 / 0.15
MSS50-062-C16 Test Conditions
Single Junction
0.5 IF = 1 mA
5 0.50 /...