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MSWSE-005-15 - Silicon PIN Diode Switch Element

Download the MSWSE-005-15 datasheet PDF. This datasheet also covers the MSWSE-005-15-MA variant, as both devices belong to the same silicon pin diode switch element family and are provided as variant models within a single manufacturer datasheet.

General Description

The MSWSE-005-15 is a PIN diode SPST switch element designed for medium incident power applications up to 4 W CW.

It has low insertion loss and medium isolation below 6 GHz.

Rev.

Key Features

  • Small Size (50 x 30 mils).
  • Broadband Performance up to 6 GHz.
  • Supports up to 4 W Power when Cold Switched.
  • Low Insertion Loss: 0.5 dB.
  • RoHS.
  • Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MSWSE-005-15-MA-COM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MSWSE-005-15 Silicon PIN Diode Switch Element Aeroflex
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MSWSE-010-15 Silicon PIN Diode Switch Element Aeroflex
MSWSE-010-15S Silicon PIN Diode Switch Element Aeroflex
MSWSE-020-05 Silicon PIN Diode Switch Element Aeroflex

Other Datasheets by MACOM Technology Solutions

Part Number Description
MSWSE-010-15S Silicon PIN Diode Switch Element
MSWSE-020-05 Silicon PIN Diode Switch Element
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MSWSE-044-10 Silicon PIN Diode Switch Element
MSWSE-050-17 Silicon SPST PIN Diode Switch Element

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MSWSE-005-15 Silicon PIN Diode Switch Element Features  Small Size (50 x 30 mils)  Broadband Performance up to 6 GHz  Supports up to 4 W Power when Cold Switched  Low Insertion Loss: 0.5 dB  RoHS* Compliant Description The MSWSE-005-15 is a PIN diode SPST switch element designed for medium incident power applications up to 4 W CW. It has low insertion loss and medium isolation below 6 GHz. Rev. V1 Electrical Specifications: TA = +25°C Parameter Test Conditions Breakdown Voltage IR = 10 µA Forward Voltage IF = 50 mA Junction Capacitance VR = 50 V, 1 MHz Total Capacitance Series Resistance Lifetime Insertion Loss Isolation I-Layer VR = 50 V, 1 MHz IF = 30 mA, 500 MHz IF = 100 mA, 500 MHz IF = 10 mA, IR = 6 mA , 50% IF = 50 mA, <2.7 GHz IF = 50 mA, <6.0 GHz VR = 50 V, <2.