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NPA1007 - GaN on Silicon Power Amplifier

This page provides the datasheet information for the NPA1007, a member of the NPA1007-MA GaN on Silicon Power Amplifier family.

Description

The NPA1007 is a GaN on silicon power amplifier optimized for 20 - 2500 MHz operation.

This amplifier has been designed for saturated and linear operation and it is assembled in a lead-free 6 x 5 mm 8-lead PDFN plastic package.

Features

  • GaN on Si HEMT D-Mode Amplifier.
  • Suitable for Linear & Saturated.

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Other Datasheets by MA-COM

    Full PDF Text Transcription

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    NPA1007 GaN on Silicon Power Amplifier 20 - 2500 MHz, 28 V, 10 W Features  GaN on Si HEMT D-Mode Amplifier  Suitable for Linear & Saturated Applications  Broadband Operation from 20 - 2500 MHz  28 V Operation  12.5 dB Gain @ 2500 MHz  43% Drain Efficiency @ 2500 MHz  100% RF Tested  Fully Matched at Input, Unmatched at Output  Lead-Free 6 x 5 mm 8-lead PDFN Package  Halogen-Free “Green” Mold Compound  RoHS* Compliant Description The NPA1007 is a GaN on silicon power amplifier optimized for 20 - 2500 MHz operation. This amplifier has been designed for saturated and linear operation and it is assembled in a lead-free 6 x 5 mm 8-lead PDFN plastic package.
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