Download the NPT1015B datasheet PDF.
This datasheet also covers the NPT1015B-MA variant, as both devices belong to the same gan wideband transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
The NPT1015 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation.
This device supports CW, pulsed, and linear operation with output power levels to 45 W (46.5 dBm) in an industry standard metal-ceramic package with bolt down flange.
Full PDF Text Transcription for NPT1015B (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
NPT1015B. For precise diagrams, and layout, please refer to the original PDF.
NPT1015B GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Features GaN on Si HEMT D-Mode Transistor Suitable for linear and saturated applications Tunable from DC - ...
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Suitable for linear and saturated applications Tunable from DC - 3.5 GHz 28 V Operation 12 dB Gain @ 2.5 GHz 54 % Drain Efficiency @ 2.5 GHz 100 % RF Tested Standard metal ceramic package with bolt down flange RoHS* Compliant Description The NPT1015 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W (46.5 dBm) in an industry standard metal-ceramic package with bolt down flange. The NPT1015 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applicat
NPT1015B Datasheet
