NPT1015B Key Features
- GaN on Si HEMT D-Mode Transistor
- Suitable for linear and saturated
- Part: NPT1015B
- Manufacturer: MACOM Technology Solutions
- Size: 1.46 MB
Related MACOM Technology Solutions Datasheets
| Part Number | Description |
|---|---|
| NPT2020 | GaN Wideband Transistor |
| NPT2020-SMB2 | GaN Wideband Transistor |
| NPT2021 | GaN Wideband Transistor |
| NPT2022 | HEMT D-Mode Amplifier |
| NPTB00004B | GaN Power Transistor |
NPT1015B Description
The NPT1015 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W (46.5 dBm) in an industry standard metal-ceramic package with bolt down flange. The NPT1015 is ideally suited for defense munications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar.