NPT1015B
Description
The NPT1015 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation.
Key Features
- GaN on Si HEMT D-Mode Transistor
- Suitable for linear and saturated applications
- Tunable from DC - 3.5 GHz
- 28 V Operation
- 12 dB Gain @ 2.5 GHz
- 54 % Drain Efficiency @ 2.5 GHz
- 100 % RF Tested
- Standard metal ceramic package with bolt down
