Download the NPT2020-SMB2 datasheet PDF.
This datasheet also covers the NPT2020-MA variant, as both devices belong to the same gan wideband transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
The NPT2020 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation.
This device supports CW, pulsed, and linear operation with output power levels to 50 W (47 dBm) in an industry standard surface mount package.
Full PDF Text Transcription for NPT2020-SMB2 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
NPT2020-SMB2. For precise diagrams, and layout, please refer to the original PDF.
NPT2020 GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz Features GaN on Si HEMT Depletion Mode Transistor Suitable for Linear and Saturated Applications Tunable fro...
View more extracted text
nsistor Suitable for Linear and Saturated Applications Tunable from DC - 3.5 GHz 48 V Operation 13.5 dB Gain at 3.5 GHz 55 % Drain Efficiency at 3.5 GHz 100 % RF Tested Standard package with bolt down flange RoHS* Compliant and 260°C reflow compatible Description The NPT2020 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 50 W (47 dBm) in an industry standard surface mount package. The NPT2020 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applica
NPT2020-SMB2 Datasheet
