NPTB00004B Overview
The NPTB00004B GaN HEMT is a power transistor optimized for DC - 6 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 5 W (37 dBm) in an industry standard surface mount plastic package. The exposed pad centered on the package bottom must be connected to RF and DC ground.
NPTB00004B Key Features
- GaN on Si HEMT D-Mode Transistor
- Suitable for linear and saturated