NPTB00004B Overview
Key Specifications
Description
The NPTB00004B GaN HEMT is a power transistor optimized for DC - 6 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 5 W (37 dBm) in an industry standard surface mount plastic package.
Key Features
- GaN on Si HEMT D-Mode Transistor
- Suitable for linear and saturated applications
- Tunable from DC
- 28 V Operation
- 14.8 dB Gain @ 2.5 GHz
- 57 % Drain Efficiency @ 2.5 GHz
- 100 % RF Tested
- Industry standard SOIC plastic package
- RoHS* Compliant
