Download the NPTB00004B datasheet PDF.
This datasheet also covers the NPTB00004B-MA variant, as both devices belong to the same gan power transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
The NPTB00004B GaN HEMT is a power transistor optimized for DC - 6 GHz operation.
This device supports CW, pulsed, and linear operation with output power levels to 5 W (37 dBm) in an industry standard surface mount plastic package.
Full PDF Text Transcription for NPTB00004B (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
NPTB00004B. For precise diagrams, and layout, please refer to the original PDF.
GaN Power Transistor, 28 V, 5 W DC - 6 GHz Features • GaN on Si HEMT D-Mode Transistor • Suitable for linear and saturated applications • Tunable from DC - 6 GHz • 28 V O...
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r linear and saturated applications • Tunable from DC - 6 GHz • 28 V Operation • 14.8 dB Gain @ 2.5 GHz • 57 % Drain Efficiency @ 2.5 GHz • 100 % RF Tested • Industry standard SOIC plastic package • RoHS* Compliant Applications • Defense Communications • Land Mobile Radio • Avionics • Wireless Infrastructure • ISM • VHF/UHF/L/S-Band Radar Description The NPTB00004B GaN HEMT is a power transistor optimized for DC - 6 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 5 W (37 dBm) in an industry standard surface mount plastic package.
NPTB00004B Datasheet
