NPTB00004B Key Features
- GaN on Si HEMT D-Mode Transistor
- Suitable for linear and saturated
- Part: NPTB00004B
- Manufacturer: MACOM Technology Solutions
- Size: 2.17 MB
Related MACOM Technology Solutions Datasheets
| Part Number | Description |
|---|---|
| NPT1015B | GaN Wideband Transistor |
| NPT2020 | GaN Wideband Transistor |
| NPT2020-SMB2 | GaN Wideband Transistor |
| NPT2021 | GaN Wideband Transistor |
| NPT2022 | HEMT D-Mode Amplifier |
NPTB00004B Description
The NPTB00004B GaN HEMT is a power transistor optimized for DC - 6 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 5 W (37 dBm) in an industry standard surface mount plastic package. The exposed pad centered on the package bottom must be connected to RF and DC ground.