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PH2731-75L - Radar Pulsed Power Transistor

Download the PH2731-75L datasheet PDF. This datasheet also covers the PH2731-75L-MA variant, as both devices belong to the same radar pulsed power transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • NPN silicon microwave power transistors.
  • Common base configuration.
  • Broadband Class C operation.
  • High efficiency inter-digitized geometry.
  • Diffused emitter ballasting resistors.
  • Gold metallization system.
  • Internal input and output impedance matching.
  • Hermetic metal/ceramic package.
  • RoHS compliant Outline Drawing Rev. V1 Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipa.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PH2731-75L-MA-COM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
PH2731-20M Radar Pulsed Power Transistor/ 2OW/ loops Pulse/ 10% Duty 2.7 - 3.1 GHz Tyco Electronics
PH2731-5M Radar Pulsed Power Transistor/ 5W/ IOOps Pulse/ 10% Duty Tyco Electronics
PH270F2 FRD MODULE ETC
PH270F6 FRD MODULE 270A/600V/trr:170nsec Nihon Inter Electronics Corporation
PH2729-150M Radar Pulsed Power Transistor-150 Watts 2.7-2.9 GHz/ 100ms Pulse/ 10% Duty Tyco Electronics

Other Datasheets by MACOM Technology Solutions

Part Number Description
PH2731-20M Radar Pulsed Power Transistor
PH2731-5M Radar Pulsed Power Transistor
PH2729-110M Radar Pulsed Power Transistor
PH2729-130M Radar Pulsed Power Transistor
PH2729-25M Radar Pulsed Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PH2731-75L Radar Pulsed Power Transistor 75 W, 2.7 - 3.1 GHz, 300 µs Pulse, 10% Duty Features  NPN silicon microwave power transistors  Common base configuration  Broadband Class C operation  High efficiency inter-digitized geometry  Diffused emitter ballasting resistors  Gold metallization system  Internal input and output impedance matching  Hermetic metal/ceramic package  RoHS compliant Outline Drawing Rev. V1 Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 65 3.0 7.