Datasheet4U Logo Datasheet4U.com

PH3134-10M - Radar Pulsed Power Transistor

Download the PH3134-10M datasheet PDF (PH3134-10M-MA included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for radar pulsed power transistor.

Features

  • NPN silicon microwave power transistors.
  • Common base configuration.
  • Broadband Class C operation.
  • High efficiency inter-digitized geometry.
  • Diffused emitter ballasting resistors.
  • Gold metallization system.
  • Internal input and output impedance matching.
  • Hermetic metal/ceramic package.
  • RoHS compliant Outline Drawing Rev. V1 Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipa.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PH3134-10M-MA-COM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

  • PH3134-11S - Radar Pulsed Power Transistor/ 11 W/ lms Pulse/ 10% Duty 3.1 - 3.4 GHz (Tyco Electronics)
  • PH3134-30S - Radar Pulsed Power Transistor/ 3OW/ lms Pulse/ 10% Duty 3.1 - 3.4 GHz (Tyco Electronics)
  • PH3134-55L - Radar Pulsed Power Transistor/ SW/ 300ms Pulse/ 10% Duty 3.1 - 3.4 GHz (Tyco Electronics)
  • PH3134-65M - Radar Pulsed Power Transistor/ 65W/ 1OOms Pulse/ 10% Duty 3.1 - 3.4 GHz (Tyco Electronics)
  • PH3134-75S - Radar Pulsed Power Transistor/75W 1ms Pulse/10% Duty 3.1-3.4GHz (Tyco Electronics)
  • PH3135-20M - Radar Pulsed Power Transistor/ 20W/100ms Pulse/10% Duty 3.1-3.5 GHz (Tyco Electronics)
  • PH3135-25S - Radar Pulsed Power Transistor/25W/2ms Pulse/10% Duty 3.1-3.5GHz (Tyco Electronics)
  • PH3135-30M - Radar Pulsed Power Transistor/ 3OW/ IOOms Pulse/ 10% Duty 3.1 - 3.5 GHz (Tyco Electronics)
  • PH3135-5M - Radar Pulsed Power Transistor/ 5W/ looms Pulse/ 10% Duty 3.1 - 3.5 GHz (Tyco Electronics)
  • PH3135-5S - Radar Pulsed Power Transistor/5W/2ms Pulse/ 10% Duty 3.1-3.5 GHz (Tyco Electronics)
Other Datasheets by MA-COM

Full PDF Text Transcription

Click to expand full text
PH3134-10M Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty Features  NPN silicon microwave power transistors  Common base configuration  Broadband Class C operation  High efficiency inter-digitized geometry  Diffused emitter ballasting resistors  Gold metallization system  Internal input and output impedance matching  Hermetic metal/ceramic package  RoHS compliant Outline Drawing Rev. V1 Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 60 3.0 1.
Published: |