Datasheet4U Logo Datasheet4U.com

PH3134-11S - Radar Pulsed Power Transistor

This page provides the datasheet information for the PH3134-11S, a member of the PH3134-11S-MA Radar Pulsed Power Transistor family.

Datasheet Summary

Features

  • NPN silicon microwave power transistors.
  • Common base configuration.
  • Broadband Class C operation.
  • High efficiency inter-digitized geometry.
  • Diffused emitter ballasting resistors.
  • Gold metallization system.
  • Internal input and output impedance matching.
  • Hermetic metal/ceramic package.
  • RoHS compliant M/A-COM Products Released, 10 Jul 07 Outline Drawing Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Vol.

📥 Download Datasheet

Datasheet preview – PH3134-11S

Datasheet Details

Part number PH3134-11S
Manufacturer MA-COM
File Size 89.48 KB
Description Radar Pulsed Power Transistor
Datasheet download datasheet PH3134-11S Datasheet
Additional preview pages of the PH3134-11S datasheet.

📁 Similar Datasheet

  • PH3134-11S - Radar Pulsed Power Transistor/ 11 W/ lms Pulse/ 10% Duty 3.1 - 3.4 GHz (Tyco Electronics)
  • PH3134-30S - Radar Pulsed Power Transistor/ 3OW/ lms Pulse/ 10% Duty 3.1 - 3.4 GHz (Tyco Electronics)
  • PH3134-55L - Radar Pulsed Power Transistor/ SW/ 300ms Pulse/ 10% Duty 3.1 - 3.4 GHz (Tyco Electronics)
  • PH3134-65M - Radar Pulsed Power Transistor/ 65W/ 1OOms Pulse/ 10% Duty 3.1 - 3.4 GHz (Tyco Electronics)
  • PH3134-75S - Radar Pulsed Power Transistor/75W 1ms Pulse/10% Duty 3.1-3.4GHz (Tyco Electronics)
  • PH3135-20M - Radar Pulsed Power Transistor/ 20W/100ms Pulse/10% Duty 3.1-3.5 GHz (Tyco Electronics)
  • PH3135-25S - Radar Pulsed Power Transistor/25W/2ms Pulse/10% Duty 3.1-3.5GHz (Tyco Electronics)
  • PH3135-30M - Radar Pulsed Power Transistor/ 3OW/ IOOms Pulse/ 10% Duty 3.1 - 3.5 GHz (Tyco Electronics)
  • PH3135-5M - Radar Pulsed Power Transistor/ 5W/ looms Pulse/ 10% Duty 3.1 - 3.5 GHz (Tyco Electronics)
  • PH3135-5S - Radar Pulsed Power Transistor/5W/2ms Pulse/ 10% Duty 3.1-3.5 GHz (Tyco Electronics)
Other Datasheets by MA-COM

Full PDF Text Transcription

Click to expand full text
PH3134-11S Radar Pulsed Power Transistor 11W, 3.1-3.4 GHz, 1µs Pulse, 10% Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/ceramic package • RoHS compliant M/A-COM Products Released, 10 Jul 07 Outline Drawing Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 60 3.0 1.
Published: |