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PH3135-65M - Radar Pulsed Power Transistor

This page provides the datasheet information for the PH3135-65M, a member of the PH3135-65M-MA Radar Pulsed Power Transistor family.

Datasheet Summary

Features

  • NPN silicon microwave power transistors.
  • Common base configuration.
  • Broadband Class C operation.
  • High efficiency inter-digitized geometry.
  • Diffused emitter ballasting resistors.
  • Gold metallization system.
  • Internal input and output impedance matching.
  • Hermetic metal/ceramic package.
  • RoHS compliant M/A-COM Products Released, 10 Aug 07 Outline Drawing Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Vol.

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Datasheet preview – PH3135-65M

Datasheet Details

Part number PH3135-65M
Manufacturer MA-COM
File Size 97.67 KB
Description Radar Pulsed Power Transistor
Datasheet download datasheet PH3135-65M Datasheet
Additional preview pages of the PH3135-65M datasheet.

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Full PDF Text Transcription

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PH3135-65M Radar Pulsed Power Transistor 65W, 3.1-3.5 GHz, 100µs Pulse, 10% Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/ceramic package • RoHS compliant M/A-COM Products Released, 10 Aug 07 Outline Drawing Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 65 3.0 7.
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