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PH3135-90S - Radar Pulsed Power Transistor

Download the PH3135-90S datasheet PDF. This datasheet also covers the PH3135-90S-MA variant, as both devices belong to the same radar pulsed power transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • NPN silicon microwave power transistors.
  • Common base configuration.
  • Broadband Class C operation.
  • High efficiency inter-digitized geometry.
  • Diffused emitter ballasting resistors.
  • Gold metallization system.
  • Internal input and output impedance matching.
  • Hermetic metal/ceramic package.
  • RoHS compliant M/A-COM Products Released, 10 Aug 07 Outline Drawing Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Vol.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PH3135-90S-MA-COM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
PH3135-90S Radar Pulsed Power Transistor/ 90W/2ms Pulse/10%Duty 3.1-3.5GHz Tyco Electronics
PH3135-20M Radar Pulsed Power Transistor/ 20W/100ms Pulse/10% Duty 3.1-3.5 GHz Tyco Electronics
PH3135-25S Radar Pulsed Power Transistor/25W/2ms Pulse/10% Duty 3.1-3.5GHz Tyco Electronics
PH3135-30M Radar Pulsed Power Transistor/ 3OW/ IOOms Pulse/ 10% Duty 3.1 - 3.5 GHz Tyco Electronics
PH3135-5M Radar Pulsed Power Transistor/ 5W/ looms Pulse/ 10% Duty 3.1 - 3.5 GHz Tyco Electronics

Other Datasheets by MACOM Technology Solutions

Part Number Description
PH3135-20M Radar Pulsed Power Transistor
PH3135-25S Radar Pulsed Power Transistor
PH3135-5M Radar Pulsed Power Transistor
PH3135-65M Radar Pulsed Power Transistor
PH3134-10M Radar Pulsed Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PH3135-90S Radar Pulsed Power Transistor 90W, 3.1-3.5 GHz, 2µs Pulse, 10% Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/ceramic package • RoHS compliant M/A-COM Products Released, 10 Aug 07 Outline Drawing Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 65 3.0 10.