Datasheet4U Logo Datasheet4U.com

XL1000-BD - Low Noise Amplifier

Download the XL1000-BD datasheet PDF. This datasheet also covers the XL1000-BD-MA variant, as both devices belong to the same low noise amplifier family and are provided as variant models within a single manufacturer datasheet.

General Description

The XL1000-BD is a 3-stage 20 - 40 GHz GaAs MMIC low noise amplifier that has a small signal gain of 20 dB with a noise figure of 2 dB across the band.

This MMIC uses a GaAs pHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.

Key Features

  • Self Bias Architecture.
  • Small Size.
  • 3 or 5 V Operation.
  • 20 dB Small Signal Gain.
  • 2 dB Noise Figure.
  • 9 dBm P1dB Compression Point.
  • 100% On-Wafer RF, DC and Noise Figure Testing.
  • 100% Visual Inspection to MIL-STD-883 Method 2010.
  • RoHS.
  • Compliant and 260°C Reflow Compatible.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (XL1000-BD-MA-COM.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
XL1000-BD Low Noise Amplifier 20 - 40 GHz Features  Self Bias Architecture  Small Size  3 or 5 V Operation  20 dB Small Signal Gain  2 dB Noise Figure  9 dBm P1dB Compression Point  100% On-Wafer RF, DC and Noise Figure Testing  100% Visual Inspection to MIL-STD-883 Method 2010  RoHS* Compliant and 260°C Reflow Compatible Description The XL1000-BD is a 3-stage 20 - 40 GHz GaAs MMIC low noise amplifier that has a small signal gain of 20 dB with a noise figure of 2 dB across the band. This MMIC uses a GaAs pHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.