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XP1005-BD - Power Amplifier

Download the XP1005-BD datasheet PDF. This datasheet also covers the XP1005-BD-MA variant, as both devices belong to the same power amplifier family and are provided as variant models within a single manufacturer datasheet.

General Description

M/A-COM Tech’s four stage 35.0-43.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +24.0 dBm saturated output power.

The device also includes Lange couplers to achieve good output return loss.

Key Features

  • Excellent Saturated Output Stage.
  • Balanced Design Provides Good Output Match.
  • 26.0 dB Small Signal Gain.
  • +24.0 dBm Saturated Output Power.
  • 100% On-Wafer RF, DC and Output Power Testing.
  • 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010.
  • RoHS.
  • Compliant and 260°C Reflow Compatible.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (XP1005-BD-MA-COM.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
XP1005-BD Power Amplifier 35.0-43.0 GHz Features  Excellent Saturated Output Stage  Balanced Design Provides Good Output Match  26.0 dB Small Signal Gain  +24.0 dBm Saturated Output Power  100% On-Wafer RF, DC and Output Power Testing  100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010  RoHS* Compliant and 260°C Reflow Compatible Description M/A-COM Tech’s four stage 35.0-43.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +24.0 dBm saturated output power. The device also includes Lange couplers to achieve good output return loss. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.