XX1007-BD Description
M/A- Tech’s 13.5-17.0 / 27.0-34.0 GHz GaAs MMIC doubler integrates a gain stage, passive doubler and driver amplifier onto a single device. The XX1007-BD has a self-biased architecture requiring a single positive supply (+5V) only and integrated on-chip bypassing capacitor eliminating the need for external capacitor. This MMIC uses M/A - Tech’s GaAs PHEMT device model technology, and is based upon electron beam...
XX1007-BD Key Features
- Integrated Gain, Doubler and Driver Stages
- Self-biased Architecture
- +21.0 dBm Output Saturated Power
- 40.0 dBc Fundamental Suppression
- On-Chip ESD Protection
- 100% On-Wafer RF, DC & Output Power Testing
- 100% Visual Inspection to MIL-STD-883
- RoHS- pliant and 260°C Reflow patible
- Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and