MAPRST0002 Datasheet | MACOM Technology Solutions

Features - - - - - - - - - NPN silicon microwave power transistors mon base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package Ro HS pliant M/A- Products Released, 30 May 07 Outline Drawing Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 70 3.0 3.5 100 -65 to +200 200 Units V V A W °C °C Electrical Specifications: TC = 25 ± 5°C (Room Ambient ) Parameter Test Conditions Frequency Symbol BVCES ICES F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz RTH(JC) POUT GP Min 70 50 9.5 50 - Max 3.5 1.8 -9 3:1 1.5:1 Units V m A °C/W W d B % d B - Collector-Emitter Breakdown Voltage IC = 15m A Collector-Emitter Leakage Current Thermal Resistance Output Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stability VCE = 40V Vcc = 40V, Pin = 5.6W Vcc = 40V, Pin = 5.6W Vcc = 40V, Pin = 5.6W Vcc = 40V, Pin = 5.6W Vcc = 40V, Pin = 5.6W Vcc = 40V, Pin = 5.6W Vcc = 40V, Pin = 5.6W ηC RL VSWR-T VSWR-S ADVANCED: Data Sheets contain information regarding a product M/A- Technology Solutions - North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, - Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. mitment to develop is not guaranteed. - Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A- Technology Visit .matech. for additional data sheets and product information. Solutions has under development....