MACOM Technology Solutions 1N3600
Silicon Switching Diode
| Part No. | 1N3600 |
|---|---|
| Datasheet | 1N3600 Download |
| Manufacturer |  MACOM Technology Solutions |
| Description | Silicon Switching Diode |
| Buy | Stock & Price |
FEATURES
● Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231● Metallurgically Bonded
● Hermetically Sealed
● Double Plug Construction
MAXIMUM RATINGS
Operating & Storage Temperature: -65°C to +175°C Operating Current: 300 mA @ TA = +25°C Derating: 2 mA DC/°C above TL = +75°C @ L = 3/8” Surge Current A: 2 A (pk) tP = 8.3 ms, VRM = 0 Surge Current B: 4 A (pk) tP = 1 µs, VRM = 0 Rev. V1ELECTRICAL SPECIFICATIONS
@ +25°C (unless otherwise Specified) TYPE # VBR IR = 10 μA VRWM 1N3600 1N4150, -1 V dc 75 75 V (pk) 50 50 IR1 VR = 50 Vdc TA = 25°C μA dc 0.1 0.1 IR2 VR = 50 Vdc TA =150°C μA dc 100 100 C Trr IR = 0; f = 1 MHz IF = IR = 10 to 100 mA dc ac signal = 50 mV (p-P) RL = 100 Ω pF ns 2.5 4.0 2.5 4.0 Forward Voltage Limits - All Types Limits minimum maximum VF1 IF = 1 mA dc V dc 0.540 0.620 VF2 IF = 10 mA dc V dc 0.660 0.740 VF3 IF = 50 mA dc (Pulsed) V dc 0.760 0.860 VF4 IF = 100 mA dc
