MACOM Technology Solutions 2N2222A
Radiation Hardened NPN Silicon Switching Transistors
FEATURES
● Qualified to MIL-PRF-19500/255● Levels JANSM-3K Rads (Si) JAN JANSD-10K Rads (Si) JANTX JANSP-30K Rads (Si) JANTXV JANSL-50K Rads (Si) JAN JANSR-100K Rads (Si)
● TO-18 (TO-206AA), Surface mount UA & UB Packages
APPLICATIONS
● Switching and LinearAPPLICATIONS
● DC and VHF AmplifierAPPLICATIONS
ELECTRICAL SPECIFICATIONS
@ TA = 25°C Parameter Test Conditions Symbol Units Minimum Maximum Off Characteristics: Collector - Emitter Breakdown IC = 10 mAdc V(BR)CEO Vdc 50 — Collector - Base Cutoff Current Emitter - Base Cutoff Current VCB = 75 Vdc VCB = 60 Vdc VEB = 6.0 Vdc VEB = 4.0 Vdc ICBO1 ICBO2 IEBO1 IEBO2 µAdc nAdc µAdc nAdc — — 10 10 10 10 Collector - Emitter Cutoff Current VCE = 50 Vdc ICES nAdc — 50 On Characteristics1: Forward Current Transfer Ratio Collector - Base Cutoff Current 2N2221A, L, UA, UB IC = 0.1 mAdc, VCE = 10 V