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CGH40120F Datasheet Rf Power Gan Hemt

Manufacturer: MACOM Technology Solutions

Overview: CGH40120F 120 W, RF Power GaN HEMT.

General Description

The CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efficiency, high gain, and wide bandwidth capabilities making the CGH40120F ideal for linear and compressed amplifier circuits.

Key Features

  • Up to 2.5 GHz operation.
  • 20 dB small signal gain at 1.0 GHz.
  • 15 dB small signal gain at 2.0 GHz.
  • 120 W typical PSAT.
  • 70% efficiency at PSAT.
  • 28 V operation.

CGH40120F Distributor