CGH40120F Description
The CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain, and wide bandwidth capabilities making the CGH40120F ideal for linear and pressed amplifier circuits.
CGH40120F Key Features
- Up to 2.5 GHz operation
- 20 dB small signal gain at 1.0 GHz
- 15 dB small signal gain at 2.0 GHz
- 120 W typical PSAT
- 70% efficiency at PSAT
- 28 V operation
CGH40120F Applications
- Up to 2.5 GHz operation