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CGHV14500F - GaN HEMT

General Description

The CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for DC - 1.8 GHz L-Band radar amplifier applications.

Key Features

  • Reference design amplifier 1.2 - 1.4 GHz Operation.
  • FET tuning range UHF through 1800 MHz.
  • 500 W Typical Output Power.
  • 16 dB Power Gain.
  • 68% Typical Drain Efficiency.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGHV14500F 500 W, DC - 1800 MHz, GaN HEMT for L-Band Radar Systems Description The CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for DC - 1.8 GHz L-Band radar amplifier applications. The transistor could be utilized for band specific applications ranging from 800 through 1600 MHz. The package options are ceramic/metal flange and pill package. Package Types: 440117, 440133 PNs: CGHV14500F, CGHV14500P Typical Performance Over 1.2 - 1.4 GHz (TC = 25ºC) of Demonstration Amplifier Parameter 1.2 GHz 1.25 GHz 1.3 GHz 1.35 GHz 1.4 GHz Outdoor Power 545 540 530 530 530 Gain 16.4 16.3 16.2 16.2 16.