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CGHV14500F Datasheet Gan Hemt

Manufacturer: MACOM Technology Solutions

Overview: CGHV14500F 500 W, DC - 1800 MHz, GaN HEMT for L-Band Radar Systems.

General Description

The CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for DC - 1.8 GHz L-Band radar amplifier applications.

The transistor could be utilized for band specific applications ranging from 800 through 1600 MHz.

The package options are ceramic/metal flange and pill package.

Key Features

  • Reference design amplifier 1.2 - 1.4 GHz Operation.
  • FET tuning range UHF through 1800 MHz.
  • 500 W Typical Output Power.
  • 16 dB Power Gain.
  • 68% Typical Drain Efficiency.

CGHV14500F Distributor