Datasheet Details
| Part number | CGHV14500F |
|---|---|
| Manufacturer | MACOM Technology Solutions |
| File Size | 2.29 MB |
| Description | GaN HEMT |
| Datasheet | CGHV14500F-MACOM.pdf |
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Overview: CGHV14500F 500 W, DC - 1800 MHz, GaN HEMT for L-Band Radar Systems.
| Part number | CGHV14500F |
|---|---|
| Manufacturer | MACOM Technology Solutions |
| File Size | 2.29 MB |
| Description | GaN HEMT |
| Datasheet | CGHV14500F-MACOM.pdf |
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|
|
The CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for DC - 1.8 GHz L-Band radar amplifier applications.
The transistor could be utilized for band specific applications ranging from 800 through 1600 MHz.
The package options are ceramic/metal flange and pill package.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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CGHV14500 | GaN HEMT | Cree |
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