CGHV14500F Overview
The CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for DC - 1.8 GHz L-Band radar amplifier applications. The transistor could be utilized for band specific applications ranging from 800 through 1600 MHz. The package options are ceramic/metal flange and pill package.
CGHV14500F Key Features
- Reference design amplifier 1.2
- 1.4 GHz Operation
- FET tuning range UHF through 1800 MHz
- 500 W Typical Output Power
- 16 dB Power Gain
- 68% Typical Drain Efficiency
- <0.3 dB Pulsed Amplitude Droop
- Internally pre-matched on input, unmatched output
