Datasheet Summary
500 W, DC
- 1800 MHz, GaN HEMT for L-Band Radar Systems
Description
The CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for DC
- 1.8 GHz L-Band radar amplifier applications. The transistor could be utilized for band specific applications ranging from 800 through 1600 MHz. The package options are ceramic/metal flange and pill package.
Package Types: 440117, 440133 PNs: CGHV14500F, CGHV14500P
Typical Performance Over 1.2
- 1.4 GHz (TC = 25ºC) of Demonstration Amplifier
Parameter
1.2 GHz 1.25 GHz 1.3 GHz 1.35 GHz 1.4 GHz
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