Datasheet Summary
- 3.1 GHz, 500 W GaN HPA
Description
The CGHV31500F1 is a 500W packaged transistor fully matched to 50 ohms at both input and output ports. Utilizing the high performance, 0.4um GaN on SiC production process, the CGHV31500F1 operates from 2.7 to 3.1 GHz and supports both defense and mercial-related s-band radar applications. The CGHV31500F1 typically achieves 500 W of saturated output power with 11 dB of large signal gain and 60% drain efficiency under long pulse operation.
Packaged in a thermally-enhanced, flange package, the CGHV31500F1 provides superior performance under long pulse operation allowing customers to improve SWaP-C benchmarks in their next-generation...