MACOM Technology Solutions CMPA5259025F
The CMPA5259025F is a gallium-nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259025F ideal for 5.2 - 5.9 GHz radar amplifier applications. The transistor is supplied in a ceramic/metal flange package. 2.2, OCTOBER 2023 CMPA5259025F Absolute Maximum Ratings (Not Simultaneous) at 25 °C Case Temperature Parameter Symbol Rating Units Drain-Source Voltage Gate-Source Voltage Storage Temperature Operating Junction Temperature Soldering Temperature Screw Torque VDSS 84 VDC VGS -10, +2 VDC TSTG -55...