CMPA5259025F Overview
The CMPA5259025F is a gallium-nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259025F ideal for 5.2 - 5.9 GHz radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.
CMPA5259025F Key Features
- 30 dB small signal gain
- High breakdown voltage
