MACOM Technology Solutions DU2880T
RF Power MOSFET Transistor
| Part No. | DU2880T |
|---|---|
| Datasheet | DU2880T Download |
| Manufacturer |  MACOM Technology Solutions |
| Description | RF Power MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
● N- channel enhancement mode device● DMOS structure
● Lower capacitances for broadband operation
● High saturated output power
● Lower noise figure than bipolar devices
● RoHS Compliant
ABSOLUTE MAXIMUM RATINGS
AT 25° C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance VDS VGS IDS PD TJ TSTG θJC 65 20 16 206 200 -65 to +150 0.85 Units V V A W °C °C °C/W TYPICAL DEVICE IMPEDANCE F (MHz) ZIN (Ω) ZLOAD (Ω) 30 5.4 - j4.4 5.7 +j4.7 50 2.5 - j4.4 3.4 + j3.5 100 1.6 - j3.4 2.4 + j2.4 175 0.7 - j1.2 1.7 + j0.8 VDD = 28V, IDQ = 400mA, POUT = 80 W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. Package Outline Rev. V1 LETTER DIM A B C D E F G H J K
