GTRB424908FC
Description
The GTRB424908FC/1 is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications.
Key Features
- GaN on SiC HEMT technology
- Human Body Model Class 1C (per ANSI/ESDA/ JEDEC JS-001)
