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MAPC-A1103 - GaN Amplifier

General Description

The MAPC-A1103 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for DC - 2.7 GHz frequency operation.

The device supports both CW and pulsed operation with output power levels of at least 270 W (54.3 dBm) in an air cavity ceramic package.

Key Features

  • MACOM PURE.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaN Amplifier 50 V, 270 W DC - 2.7 GHz MAPC-A1103 Rev. V4 Features • MACOM PURE CARBIDE™ Amplifier Series • Suitable for Linear & Saturated Applications • CW & Pulsed Operation: 270 W Output Power • Internally Pre-Matched • 28 V and 50 V Operation • Compatible with MACOM Power Management Bias Controller/Sequencer MABC-11040 Applications Military Radio Communications, RADAR, Avionics, Digital Cellular Infrastructure, RF Energy, and Test Instrumentation. AC-650S-4 Functional Schematic Description The MAPC-A1103 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with output power levels of at least 270 W (54.3 dBm) in an air cavity ceramic package.