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MAPC-A2021 - GaN Amplifier

General Description

The MAPC-A2021 is a GaN on Silicon Carbide HEMT D-mode amplifier suitable for applications 1W average power and optimized for 1.8 - 2.7 GHz modulated signal operation.

The device supports pulsed, and linear operation with peak output power levels to 8 W (39 dBm) in an 4 mm surface mount QFN package.

Key Features

  • MACOM PURE.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaN Amplifier 32 V, 8 W 1.8 - 2.7 GHz Features • MACOM PURE CARBIDE™ Amplifier Series • Optimized for 1.8 - 2.7 GHz Applications • High Terminal Impedances for Broadband Performance • 26 - 32 V Operation • Low Thermal Resistance • 100% RF Tested • RoHS* Compliant Applications • 5G Cellular Networks • Tri-band Small Cells Description The MAPC-A2021 is a GaN on Silicon Carbide HEMT D-mode amplifier suitable for applications 1W average power and optimized for 1.8 - 2.7 GHz modulated signal operation. The device supports pulsed, and linear operation with peak output power levels to 8 W (39 dBm) in an 4 mm surface mount QFN package. Typical Circuit Performance: • WCDMA 3GPP TM1, 10 dB PAR @ 0.01% CCDF.