MACOM Technology Solutions MMDB45-B11
The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picoseconds pulse forming.| Part No. | MMDB45-B11 |
|---|---|
| Datasheet | MMDB45-B11 Download |
| Manufacturer |  MACOM Technology Solutions |
| Description | Silicon Step Recovery Diodes |
| Buy | Stock & Price |
FEATURES
● Output Combs to 40+ GHz● Transition Times down to 35 ps
● Screening per MIL-PRF-19500 and MIL-PRF- 38534 available
DESCRIPTION
MMDx & SMMDx Series Rev. V5 Plastic SMT w/leads Chip & Beam LeadELECTRICAL SPECIFICATIONS
: TA = 25°C Model Voltage Breakdown (VB) V Min. Junction Capacitance (CJ) pF Min. Max. Lifetime (t) ns Min. Typ. Transition Time (tt) ps Typ. Max. Frequency Cutoff (FCO) GHz Typ. Theta (θJC) °C/W Max. Chip MMD805-C12 60 2.5 3.5 80 100 250 300 130 15 MMD810-C12 50 1.5 2.5 40 70 200 250 200 22 MMD820-C12 40 1.0 1.7 30 60 80 100 390 25 MMD830-C11 25 0.5 1.0 15 30 60 80 700 45 MMD832-C11 20 0.4 0.8 10 15 60 80 660 50 MMD835-C11 15 0.3 0.7 10 20 60 70 800 60 MMD837-C11 20 0.2 0.4 5 10 60 70 1300 60 MMD840-C11 15 0.2 0.4 7 15 60 70 880 60 Beam Lead MMDB30-B11 14 0.15 0.25 1 4 30 38 530 600 MMDB35-B11 16 0.13 0.20 1 4 35 45 482 600 MMDB45-B11 25 0.11 0.20 3 8 45 58 410 600 Test Conditions: VB: IR = 10 µA CJ: VR = 6 V, 1 MHz t: IF = 10 mA, IR = 6 mA @ 50% Recovery tt:...
