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MRF10031 - Microwave Power Silicon NPN Transistor

General Description

and Applications Designed for 960 1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode

S transmitters.

Rev.

M/A-COM Technology Solutions Inc.

Key Features

  • Guaranteed performance @ 960-1215MHz, 36Vdc.
  • Output power: 30W peak.
  • Minimum gain: 9.0dB min. , 9.5dB typ.
  • 100% tested for load mismatch at all phase angles with 10:1 VSWR.
  • Hermetically sealed, industry standard package.
  • Silicon nitride passivated.
  • Gold metallized, emitter ballasted for long life and resistance to metal migration.
  • Internal input matching for broadband operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MRF10031 Microwave Power Silicon NPN Transistor 30W (peak), 960–1215MHz, 36V Features  Guaranteed performance @ 960-1215MHz, 36Vdc  Output power: 30W peak  Minimum gain: 9.0dB min., 9.5dB typ.  100% tested for load mismatch at all phase angles with 10:1 VSWR  Hermetically sealed, industry standard package  Silicon nitride passivated  Gold metallized, emitter ballasted for long life and resistance to metal migration  Internal input matching for broadband operation Description and Applications Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. Maximum Ratings Product Image Rev. V1 CASE 332A–03, STYLE 2 1 M/A-COM Technology Solutions Inc.