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MRF392 - Broadband Power Transistor

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MRF392 The RF Line Controlled “Q” Broadband Power Transistor 125W, 30 to 500MHz, 28V Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. Product Image  Specified 28 V, 400 MHz characteristics — Output power = 125 W Typical gain = 10 dB Efficiency = 55% (typ.)  Built–in input impedance matching networks for broadband operation  Push–pull configuration reduces even numbered harmonics  Gold metallization system for high reliability  100% tested for load mismatch CASE 744A–01, STYLE 1 Rev. V1 The MRF392 is two transistors in a single package with separate base and collector leads and emitters common. This arrangement provides the designer with a space saving device capable of operation in a push–pull configuration.