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MSS40-148-B10B Datasheet PDF

MACOM Technology Solutions MSS40-148-B10B

The MSS40-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry.
Part No. MSS40-148-B10B
Datasheet MSS40-148-B10B Download
Manufacturer
MACOM Technology Solutions
Description Medium Barrier Silicon Schottky Diodes
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MSS40-148-B10B datasheet page 1 preview

FEATURES

● VF, RD and CJ Matching Options
● Chip, Beam Lead and Packaged Devices
● Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available

DESCRIPTION

Optimum mixer performance is obtained with LO power of 0 dBm to +6 dBm per diode. Rev. V1 Chip

ELECTRICAL SPECIFICATIONS

: TA = 25°C Model Configuration MSS40-045-C15 Single Junction VF Typ. V 0.42 MSS40-048-C15 Single Junction 0.40 Test Conditions IF = 1 mA VBR Min. V 3 CJ Typ. / Max. pF 0.09 / 0.12 3 0.12 / 0.15 IR = 10 µA VR = 0 V F = 1 MHz RS Typ. Ω 7 7 RD Max. Ω 15 15 I = 5 mA FCO Typ. GHz 253 190 Outline C15 C15 Beam Lead

ELECTRICAL SPECIFICATIONS

: TA = 25°C Model Configuration MSS40-141-B10B Single Junction VF Typ. V 0.42 VBR Min. V 3 CJ Typ. / Max. pF 0.06 / 0.10 MSS40-
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