MACOM Technology Solutions NPA1007
The NPA1007 is a GaN on silicon power amplifier optimized for 20 - 2500 MHz operation. This amplifier has been designed for saturated and linear operation and it is assembled in a lead-free 6 x 5 mm 8-lead PDFN plastic package. The NPA1007 is a general purpose device suited for narrowband and broadband applications in test and measurement, defense communications, land mobile radio and wireless infrastructure.FEATURES
● GaN on Si HEMT D-Mode Amplifier● Suitable for Linear & Saturated
APPLICATIONS
● Broadband Operation from 20 - 2500 MHz● 28 V Operation
● 12.5 dB Gain @ 2500 MHz
● 43% Drain Efficiency @ 2500 MHz
● 100% RF Tested
● Fully Matched at Input, Unmatched at Output
● Lead-Free 6 x 5 mm 8-lead PDFN Package
● Halogen-Free “Green” Mold Compound
● RoHS* Compliant
DESCRIPTION
Ordering Information1,2 Part # Package NPA1007 Bulk NPA1007-TR0500 500 Piece Reel NPA1007-TR0100 100 Piece Reel NPA1007-SMB Evaluation Board 1. All sample boards include a part soldered down to the board. 2. Reference Application Note M513 for reel size information. Rev. V2 Functional Schematic VG 1 RFIN 2 RFIN 3 N/C 4 Input Match 9 Paddle 8 N/C 7 RFOUT / VD 6 RFOUT / VD 5 N/C Pin Configuration Pin # Pin Name Function 1 VG 2, 3 RFIN 4, 5 N/C3 Gate Voltage RF Input No Connection 6, 7 RFOUT / VD RF Output / Drain Voltage 8 N/C3 No Connection 9 Paddle4 Ground 3. All no connection pins may be left floating or connected to ground.