MACOM Technology Solutions NPT1015B
The NPT1015 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W (46.5 dBm) in an industry standard metal-ceramic package with bolt down flange. The NPT1015 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar.| Part No. | NPT1015B |
|---|---|
| Datasheet | NPT1015B Download |
| Manufacturer |  MACOM Technology Solutions |
| Description | GaN Wideband Transistor |
| Buy | Stock & Price |
FEATURES
● GaN on Si HEMT D-Mode Transistor● Suitable for linear and saturated applications
● Tunable from DC - 3.5 GHz
● 28 V Operation
● 12 dB Gain @ 2.5 GHz
● 54 % Drain Efficiency @ 2.5 GHz
● 100 % RF Tested
● Standard metal ceramic package with bolt down flange
● RoHS* Compliant
DESCRIPTION
Built using the SIGANTIC® process - a proprietary GaN-on-Silicon technology. Ordering Information Part Number NPT1015B NPT1015B-SMBPPR Package bulk quantity sample Functional Schematic Rev. V2 RFIN / VG 1 3 Flange 2 RFOUT / VD Pin Configuration Pin No. Pin Name Function 1 RFIN / VG RF Input / Gate 2 RFOUT / VD RF Output / Drain 3 Flange1 Ground / Source 1. The Flange must be connected to RF and DC ground. This path must also provide a low thermal resistance heat path. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
