MACOM Technology Solutions NPT2021
The NPT2021 GaN HEMT is a wideband transistor optimized for DC - 2.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W in an industry standard plastic package with bolt down flange. The NPT2021 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar.| Part No. | NPT2021 |
|---|---|
| Datasheet | NPT2021 Download |
| Manufacturer |  MACOM Technology Solutions |
| Description | GaN Wideband Transistor |
| Buy | Stock & Price |
FEATURES
● GaN on Si HEMT D-Mode Transistor● Suitable for linear and saturated applications
● Tunable from DC - 2.5 GHz
● 48 V Operation
● 16.5 dB Gain at 2.5 GHz
● 55 % Drain Efficiency at 2.5 GHz
● 100 % RF Tested
● TO-272 Package
● RoHS* Compliant and 260°C reflow compatible
DESCRIPTION
Built using the SIGANTIC® process - a proprietary GaN-on-Silicon technology. Functional Schematic 2 1 3 Rev. V1 Ordering Information Part Number NPT2021 NPT2021-SMBPPR Package Bulk Quantity Sample Board Pin Configuration Pin No. Pin Name 1 RFIN / VG 2 RFOUT / VD 3 Pad1 Function RF Input / Gate RF Output / Drain Ground / Source 1. The exposed pad centered on the package bottom must be connected to RF and DC ground. This path must also provide a low thermal resistance heat path. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
