MACOM Technology Solutions PH1920-33
Wireless Bipolar Power Transistor
FEATURES
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● NPN silicon microwave power transistor Common emitter class AB operation Internal input and output impedance matching Diffused emitter ballasting Gold metallization system RoHS Compliant M/A-COM Products Released - Rev. 08.07 Outline Drawing ABSOLUTE MAXIMUM RATING AT 25°C Parameter Symbol Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance VCBO VCES VEBO IC PD TJ TSTG θJC 25 65 3.0 4.7 91 200 -55 to + 150 Units V V V A W °C °C °C/W 1.6
ELECTRICAL SPECIFICATIONS
AT 25°C Parameter Symbol Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance GP ŋC Min 7.0 40 10 - Max 2:1 Units dB % dB - Test Conditions VCC = 25V, ICQ = 200 mA, Pout = 33 W, F =1930, 1990 MHz VCC = 25V, ICQ = 200 mA, Pout = 33 W, F =1930, 1990 MHz VCC = 25V, ICQ = 200 mA, Pout = 33 W, F =1930, 1990 MHz VCC = 25V, ICQ = 200 mA, Pout = 33 W, F =1930, 1990 MHz RL VSW...