MACOM Technology Solutions PH1920-45
Wireless Bipolar Power Transistor
FEATURES
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● NPN silicon microwave power transistor Common emitter class AB operation Internal input and output impedance matching Diffused emitter ballasting Gold metallization system M/A-COM Products Released - Rev. 07.07 Outline Drawing ABSOLUTE MAXIMUM RATING AT 25°C Parameter Symbol Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance VCBO VCES VEBO IC PD TJ TSTG θJC 20 65 3.0 5.5 100 200 -65 to + 150 Units V V V A W °C °C °C/W 1.3
ELECTRICAL SPECIFICATIONS
AT 25°C Parameter Symbol Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance GP ŋC Min 8 40 10 - Max 3:1 Units dB % dB - Test Conditions VCC = 25V, ICQ = 200 mA, Pout = 45 W, F =1930, 1990 MHz VCC = 25V, ICQ = 200 mA, Pout = 45 W, F =1930, 1990 MHz VCC = 25V, ICQ = 200 mA, Pout = 45 W, F =1930, 1990 MHz VCC = 25V, ICQ = 200 mA, Pout = 45 W, F =1930, 1990 MHz RL VSWR BROADBAND TEST F...