MACOM Technology Solutions PH3134-10M
Radar Pulsed Power Transistor
| Part No. | PH3134-10M |
|---|---|
| Datasheet | PH3134-10M Download |
| Manufacturer |  MACOM Technology Solutions |
| Description | Radar Pulsed Power Transistor |
| Buy | Stock & Price |
FEATURES
● NPN silicon microwave power transistors● Common base configuration
● Broadband Class C operation
● High efficiency inter-digitized geometry
● Diffused emitter ballasting resistors
● Gold metallization system
● Internal input and output impedance matching
● Hermetic metal/ceramic package
● RoHS compliant Outline Drawing Rev. V1
ABSOLUTE MAXIMUM RATINGS
at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 60 3.0 1.2 70 -65 to +200 200 Units V V A W °C °CELECTRICAL SPECIFICATIONS
: TC = 25 ± 5°C (Room Ambient ) Parameter Test Conditions Collector-Emitter Breakdown Voltage IC = 12.5mA Collector-Emitter Leakage Current VCE = 36V Thermal Resistance Vcc = 36V, Pout = 10W Input Power Vcc = 36V, Pout = 10W Power Gain Vc
